![]() An example FET common source amplifier is also described. While the article is mostly based on bipolar junction transistors (BJTs) and field effect transistors (FETs), more specialist technologies – insulated gate bipolar transistors (IGBTs) and Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) – are also introduced. ![]() The discussion also covers one specific issue that frequently arises when engineers are seeking to connect process sensors to programmable logic controllers (PLC) inputs whether to use NPN or PNP devices. It shows how to use parameters in assessing the suitability of transistors for different applications. This article endeavours to provide some guidance on this, by classifying transistors and their parameters. While this gives great choice to electronics designers, it can also create a barrier: How do I choose the best transistor for my new project or upgrade? Since then, transistors have achieved their ubiquitous presence through their use in both switching and amplification functions, and because they are available in a vast range of power capabilities, switching speeds and many other parameters. This event is widely regarded as marking the birth date of the transistor. In December 1947, researchers at Bell Laboratories demonstrated a ‘PNP point-contact germanium transistor’, acting as a speech amplifier with a power gain of 18.
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |